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A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er3+ ions.
- Source :
-
Chinese Physics B . Jul2009, Vol. 18 Issue 7, p3044-3048. 5p. - Publication Year :
- 2009
-
Abstract
- This paper compares the properties of silicon oxide and nitride as host matrices for Er ions. Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system. After deposition, the films were implanted with Er3+ at different doses. Er-doped thermal grown silicon oxide films were prepared at the same time as references. Photoluminescence features of Er3+ were inspected systematically. It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe. However, a very high annealing temperature up to 1200 degC is needed to optically activate Er3+, which may be the main obstacle to impede the application of Er-doped silicon nitride. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 18
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 43367317
- Full Text :
- https://doi.org/10.1088/1674-1056/18/7/072