Occupancy of the DX center in n-Al[sub 0.32]Ga[sub 0.68]As under uniaxial stress.

Utilizes the deep level transient spectroscopy signal height as a function of applied stress data and the statistics of the occupancy of the DX center in aluminum gallium arsenide quantum well to obtain the stress dependence of the thermal binding energy of the neutral DX center, E[sub DX]. Localization of the DX center; Explanation of the different stress directions.