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A novel low-power full-adder cell for low voltage

Authors :
Navi, Keivan
Maeen, Mehrdad
Foroutan, Vahid
Timarchi, Somayeh
Kavehei, Omid
Source :
Integration: The VLSI Journal. Sep2009, Vol. 42 Issue 4, p457-467. 11p.
Publication Year :
2009

Abstract

Abstract: This paper presents a novel low-power majority function-based 1-bit full adder that uses MOS capacitors (MOSCAP) in its structure. It can work reliably at low supply voltage. In this design, the time-consuming XOR gates are eliminated. The circuits being studied are optimized for energy efficiency at 0.18-μm CMOS process technology. The adder cell is compared with seven widely used adders based on power consumption, speed, power-delay product (PDP) and area efficiency. Intensive simulation runs on a Cadence environment and HSPICE show that the new adder has more than 11% in power savings over a conventional 28-transistor CMOS adder. In addition, it consumes 30% less power than transmission function adder (TFA) and is 1.11 times faster. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
01679260
Volume :
42
Issue :
4
Database :
Academic Search Index
Journal :
Integration: The VLSI Journal
Publication Type :
Academic Journal
Accession number :
43609656
Full Text :
https://doi.org/10.1016/j.vlsi.2009.02.001