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Semiconductor properties and redox responses at a-C:N thin film electrochemical electrodes
- Source :
-
Diamond & Related Materials . Oct2009, Vol. 18 Issue 10, p1211-1217. 7p. - Publication Year :
- 2009
-
Abstract
- Abstract: The semiconductor capacitances of the nitrogen-doped amorphous carbon (a-C:N) materials with different sp3/sp2 C ratios were studied as a function of electrode potential in a-C:N/aqueous electrolyte systems. This dependence of capacitance on electrode potential in aqueous 0.1 M NaOH shows that the investigated a-C:N materials are intrinsic semiconductors. The space-charge layers inside the a-C:N electrodes behave similar to a Helmholtz layer because of the presence of surface states when the electrolytes contain O2 or anions other than OH−. The lower density and mobility of carriers of materials with a higher sp3 C fraction within the a-C:N material causes a suppression of redox reactions, and the lower density of carriers contributes to a lower capacitance. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 09259635
- Volume :
- 18
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Diamond & Related Materials
- Publication Type :
- Academic Journal
- Accession number :
- 43871924
- Full Text :
- https://doi.org/10.1016/j.diamond.2009.04.003