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ORIENTATION DEPENDENCE OF FERROELECTRIC AND DIELECTRIC PROPERTIES IN CaBi4Ti4O15 THIN FILMS.
- Source :
-
Integrated Ferroelectrics . 2009, Vol. 105 Issue 1, p99-106. 8p. 1 Black and White Photograph, 5 Graphs. - Publication Year :
- 2009
-
Abstract
- Ferroelectric CaBi4Ti4O15 (CBTi) thin films with random orientation and high c-axis orientation were prepared on a Pt(111)/Ti/SiO2/Si(100) substrate by a chemical solution deposition method. We observed a strong dependence of ferroelectric and dielectric properties on the film orientation. The CBTi thin film with random orientation exhibited remnant polarization (2Pr) of 54 μ C/cm2 at an applied electric field of 250 kV/cm and dielectric constant (ε) of 412 at a frequency of 1 kHz. The values of 2Pr and ε were larger than those observed in the CBTi thin film with high c-axis orientation. In addition, the randomly oriented thin film showed lower leakage current density than the highly c-axis-oriented thin film. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SOLID state electronics
*FERROELECTRICITY
*DIELECTRICS
*THIN films
*ELECTRIC fields
Subjects
Details
- Language :
- English
- ISSN :
- 10584587
- Volume :
- 105
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Integrated Ferroelectrics
- Publication Type :
- Academic Journal
- Accession number :
- 43881345
- Full Text :
- https://doi.org/10.1080/10584580903139883