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Crystallization times of Ge–Te phase change materials as a function of composition.
- Source :
-
Applied Physics Letters . 8/17/2009, Vol. 95 Issue 7, p071910. 3p. 3 Graphs. - Publication Year :
- 2009
-
Abstract
- The crystallization times of Ge–Te phase change materials with variable Ge concentrations (29.5–72.4 at. %) were studied. A very strong dependence of the crystallization time on the composition for as-deposited, amorphous films was confirmed, with a minimum for the stoichiometric composition GeTe. The dependence is weaker for melt-quenched, amorphous material and crystallization times are between one to almost four orders of magnitude shorter than for as-deposited materials. This is promising for applications because recrystallization from the melt-quenched phase is the relevant process for optical and solid state memory, and fast crystallization and weak dependence on compositional variations are desirable. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 95
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 43887420
- Full Text :
- https://doi.org/10.1063/1.3212732