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Generalized Solid-state Marx Modulator Topology.

Authors :
Redondo, L. M.
Canacsinh, H.
Silva, J. Fernando
Source :
IEEE Transactions on Dielectrics & Electrical Insulation. Jun2009, Vol. 16 Issue 3, p1037-1042. 6p. 3 Black and White Photographs, 2 Diagrams, 5 Graphs.
Publication Year :
2009

Abstract

A generalized circuit topology for bipolar or unipolar high voltage repetitive pulse power applications is proposed. This circuit merges the negative and positive solid state Marx modulator concepts, which take advantage of the intensive use of semiconductor devices to increase the performance of the original dissipative Marx modulators. The flexibility of the proposed modular circuit enables the operation with negative and/or positive pulses, selectable duty cycles, frequencies and relaxation times between the positive and negative pulse. Additionally, the switching topology enables the discharge of the parasitic capacitances after each pulse, allowing the use of capacitive loads, and the clamping of inductive loads, recovering the reset energy back to the main capacitors. Analysis of efficiency and power loss will be addressed, as well as experimental details for different conditions based on laboratory prototype, with 1200 volt insulated Gate Bipolar Transistors (IGBT), diodes, and 4.5 μF capacitors. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10709878
Volume :
16
Issue :
3
Database :
Academic Search Index
Journal :
IEEE Transactions on Dielectrics & Electrical Insulation
Publication Type :
Academic Journal
Accession number :
43940734
Full Text :
https://doi.org/10.1109/TDEI.2009.5211851