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Reliability analysis of InGaN Blu-Ray laser diode
- Source :
-
Microelectronics Reliability . Sep2009, Vol. 49 Issue 9-11, p1236-1239. 4p. - Publication Year :
- 2009
-
Abstract
- Abstract: The purpose of this work is an in depth reliability analysis of Blu-Ray InGaN laser diodes (LD) submitted to CW stress at different currents and temperatures. During reliability tests, LD devices exhibit a gradual threshold current increase, while slope efficiency is almost not affected by the ageing treatment. Furthermore we demonstrate that: (i) the degradation rate shows a linear correlation with stress current level; (ii) the Ith increase is correlated to the decrease in non-radiative lifetime (τnr ); (iii) stress temperature acts as an accelerating factor for LD degradation; (iv) pure thermal storage does not significantly degrade LDs characteristics. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00262714
- Volume :
- 49
- Issue :
- 9-11
- Database :
- Academic Search Index
- Journal :
- Microelectronics Reliability
- Publication Type :
- Academic Journal
- Accession number :
- 44108807
- Full Text :
- https://doi.org/10.1016/j.microrel.2009.07.002