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Polycrystalline silicon/metal stacked gate for threshold voltage control in metal-oxide-semiconductor field-effect transistors.
- Source :
-
Applied Physics Letters . 4/3/2000, Vol. 76 Issue 14. 5 Graphs. - Publication Year :
- 2000
-
Abstract
- A stack structure for the gate electrode of metal-oxide-semiconductor (MOS) transistors is proposed, analyzed, and simulated. The stack consists of a very thin polycrystalline silicon (polysilicon) layer and metal. By changing the thickness of the polysilicon layer, one can change the effective work function of the gate. Thus, the stacked-gate structure allows for a method to continuously adjust MOS field-effect transistor threshold voltage through gate work-function engineering while retaining the proven SiO[sub 2]/polysilicon interface. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 76
- Issue :
- 14
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4412897
- Full Text :
- https://doi.org/10.1063/1.126218