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Piezoelectric field and confinement effects on the dielectric function spectrum of InGaN/GaN quantum wells.
- Source :
-
Applied Physics Letters . 1/3/2000, Vol. 76 Issue 1. - Publication Year :
- 2000
-
Abstract
- In[sub 0.13]Ga[sub 0.87]N/GaN double heterostructures and quantum wells (QWs) have been studied by room-temperature photoluminescence (PL) and spectroscopic ellipsometry (SE). PL revealed the presence of strong piezoelectric fields, which strongly influence the luminescence properties for InGaN QW widths in the 3-12 nm range. The pseudodielectric function spectrum derived from the SE measurements were analyzed using a multilayer approach, describing the dielectric function of the individual layers by a parametric oscillator model. The fundamental band-gap resonance in the InGaN dielectric-function spectrum was found to broaden for an InGaN layer width of 12 nm, as compared to bulk-like InGaN layers, due to piezoelectric field effects. For a much narrower QW width of 1.7 nm, however, quantum confinement was found to dominate over piezoelectric-field effects, resulting in a much sharper band-gap resonance shifted to higher energies and an increased oscillator strength. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *QUANTUM wells
*DIELECTRIC devices
*PHOTOLUMINESCENCE
*INDIUM compounds
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 76
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4412956
- Full Text :
- https://doi.org/10.1063/1.125662