Cite
Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration.
MLA
Visconti, P., et al. “Characteristics of Free-Standing Hydride-Vapor-Phase-Epitaxy-Grown GaN with Very Low Defect Concentration.” Applied Physics Letters, vol. 77, no. 23, Dec. 2000. EBSCOhost, https://doi.org/10.1063/1.1330563.
APA
Visconti, P., Jones, K. M., Reshchikov, M. A., Yun, F., Cingolani, R., Morkoc, , H., Park, S. S., & Lee, K. Y. (2000). Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration. Applied Physics Letters, 77(23). https://doi.org/10.1063/1.1330563
Chicago
Visconti, P., K. M. Jones, M. A. Reshchikov, F. Yun, R. Cingolani, , H. Morkoc, S. S. Park, and K. Y. Lee. 2000. “Characteristics of Free-Standing Hydride-Vapor-Phase-Epitaxy-Grown GaN with Very Low Defect Concentration.” Applied Physics Letters 77 (23). doi:10.1063/1.1330563.