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Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide.

Authors :
Shin, Jung H.
Seo, Se-young
Se-young Seo
Kim, Sangsig
Sangsig Kim
Bishop, S. G.
Bishop, S.G.
Source :
Applied Physics Letters. 4/10/2000, Vol. 76 Issue 15.
Publication Year :
2000

Abstract

The 1.54 μm Er[sup 3+] photoluminescence excitation (PLE) and photoluminescence (PL) spectra of erbium-doped silicon-rich silicon oxide (SRSO) are investigated. Between 350 and 820 nm, PLE spectra are broad and featureless, and the PL spectra are independent of the excitation wavelengths. The results indicate that in erbium-doped SRSO, the Er[sup 3+] luminescence is dominated by a single class of Er sites with a strong coupling to all the carriers in the silicon nanograins. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
76
Issue :
15
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4413518
Full Text :
https://doi.org/10.1063/1.126234