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Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide.
- Source :
-
Applied Physics Letters . 4/10/2000, Vol. 76 Issue 15. - Publication Year :
- 2000
-
Abstract
- The 1.54 μm Er[sup 3+] photoluminescence excitation (PLE) and photoluminescence (PL) spectra of erbium-doped silicon-rich silicon oxide (SRSO) are investigated. Between 350 and 820 nm, PLE spectra are broad and featureless, and the PL spectra are independent of the excitation wavelengths. The results indicate that in erbium-doped SRSO, the Er[sup 3+] luminescence is dominated by a single class of Er sites with a strong coupling to all the carriers in the silicon nanograins. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SILICON oxide
*PHOTOLUMINESCENCE
*SPECTRUM analysis
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 76
- Issue :
- 15
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4413518
- Full Text :
- https://doi.org/10.1063/1.126234