Integration of GaN with Si using a AuGe-mediated wafer bonding technique.

This letter describes integration of GaN with Si using a AuGe alloy as a bonding material. GaN is first grown on GaAs and then GaN/GaAs/AuGe/Si and GaAs/GaN/AuGe/Si structures are fabricated by wafer bonding. For the latter structure, the GaAs substrate is removed by mechanical and chemical etching. From the current-voltage measurements of both structures, it is found that the bonded interfaces do not obstruct the carrier transport. Furthermore, the optical reflection measurements reveal that AuGe works well as a mirror, which is a suitable characteristic for the integration of GaN light-emitting devices with Si. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]