Interaction of a Ti-capped Co thin film with Si[sub 3]N[sub 4].

The reaction of a Ti (8 nm) capped Co film (15 nm) with a Si[sub 3]N[sub 4] layer (150 nm) is studied after rapid thermal annealing at 660 °C for 120 s in a N[sub 2] ambient. X-ray photoelectron spectroscopy, transmission electron microscopy, electron energy-loss spectroscopy, and Auger electron spectroscopy are used to study the reaction products. Combining the results of the different analyses yields a layer stack consisting of: TiO[sub 2]/TiO/unreacted Co/(Ti,Co)[sub 2]N/Co[sub 2]Si, followed by amorphous Si[sub 3]N[sub 4]. The reaction mechanisms are discussed. Conclusions concerning the risk for degradation of nitride spacers in advanced devices are drawn. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]