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Study of electrical performance and stability of solution-processed n-channel organic field-effect transistors.
- Source :
-
Journal of Applied Physics . Sep2009, Vol. 106 Issue 5, p054504-1-054504-6. 6p. 1 Diagram, 2 Charts, 5 Graphs. - Publication Year :
- 2009
-
Abstract
- Solution processed n-channel organic field-effect transistors based on [6,6]-phenyl C61 butyric acid methyl ester with high mobility and low contact resistance are reported. Ca, Au, or Ca capped with Au (Ca/Au) was used as the top source/drain electrodes. The devices with Ca electrodes exhibit excellent n-channel behavior with electron mobility values of 0.12 cm2/V s, low threshold voltages (∼2.2 V), high current on/off ratios (105–106) and subthreshold slopes of 0.7 V/decade. By varying the channel lengths (25–200 μm) in devices with different metal/semiconductor interfaces, the effect of channel length scaling on mobility is studied and the contact resistance is extracted. The width-normalized contact resistance (RCW) for Au (12 kΩ cm) is high in comparison to Ca (7.2 kΩ cm) or Ca/Au (7.5 kΩ cm) electrodes at low gate voltage (VGS=10 V). However, in the strong accumulation regime at high gate voltage (VGS=30 V), its value is nearly independent of the choice of metal electrodes and in a range of 2.2–2.6 kΩ cm. These devices show stable electrical behavior under multiple scans and low threshold voltage instability under electrical bias stress (VDS=VGS=30 V, 1 h) in N2 atmosphere. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 106
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 44193602
- Full Text :
- https://doi.org/10.1063/1.3204655