Etching Effect of the Autocloning Structure Using Ion-Assisted Deposition.

The article presents a study that analyzes the effect of etching as well as redeposition effects with consideration on various etching times. The study was undertaken through simulating the surface evolution function patterned on the unified process model to analyze the etching effect. The findings showed that the simulation method generated good results in various etching times and the surface angular depends more on etching effect compared to redeposition effect.