High antimony content GaAs1-zNz–GaAs1-ySby type-II “W” structure for long wavelength emission.

GaAs1-zNz–GaAs1-ySby type-II “W” structures were studied for long wavelength (1300–1600 nm) applications. These structures were grown on a GaAs substrate using metal-organic vapor phase epitaxy. The antimony and nitrogen compositions in the pseudomorphic GaAs1-ySby and GaAs1-zNz were estimated by separately growing GaAs1-ySby–GaAs and GaAs1-zNz–GaAs strained superlattices. X-ray studies indicate that a maximum of y=0.37 antimony can be incorporated in the pseudomorphic GaAs1-ySby film grown using triethyl gallium (TEGa), trimethyl antimony (TMSb) and arsine (AsH3) at the growth temperatures employed. A postgrowth anneal was used to improve the emission intensity but leads to shifts in the emission wavelength. An emission wavelength as long as 1.47 μm was realized using a GaAs1-zNz–GaAs1-ySby–GaAs1-zNz structure. [ABSTRACT FROM AUTHOR]