Capacitance-voltage study of heterostructures with InGaAs/GaAs quantum wells in the temperature range from 10 to 320 K.

Heterostructures with single strained InGaAs/GaAs quantum wells have been studied by measuring the capacitance-voltage characteristics in a wide range of temperatures and test signal frequencies. Based on the analysis of experimental capacitance-voltage characteristics, a temperature shift of the peak in the apparent profile of a majority carrier’s concentration is revealed and a quantitative model of this phenomenon is proposed. The effect of incomplete impurity ionization on the experimentally found quantum well’s charge is determined. It is established by numerical simulation and fitting of capacitance-voltage characteristics that the conduction band’s discontinuity for heterostructures with strained In xGa1 − xAs/GaAs quantum wells ( x = 0.225) remains constant and equal to 172 ± 10 meV at temperatures from 320 to 100 K. [ABSTRACT FROM AUTHOR]