Cite
Misfit dislocation density and strain relaxation in graded semiconductor heterostructures with arbitrary composition profiles.
MLA
Bertoli, B., et al. “Misfit Dislocation Density and Strain Relaxation in Graded Semiconductor Heterostructures with Arbitrary Composition Profiles.” Journal of Applied Physics, vol. 106, no. 7, Oct. 2009, pp. 073519–26. EBSCOhost, https://doi.org/10.1063/1.3243312.
APA
Bertoli, B., Suarez, E. N., Ayers, J. E., & Jain, F. C. (2009). Misfit dislocation density and strain relaxation in graded semiconductor heterostructures with arbitrary composition profiles. Journal of Applied Physics, 106(7), 073519–073526. https://doi.org/10.1063/1.3243312
Chicago
Bertoli, B., E. N. Suarez, J. E. Ayers, and F. C. Jain. 2009. “Misfit Dislocation Density and Strain Relaxation in Graded Semiconductor Heterostructures with Arbitrary Composition Profiles.” Journal of Applied Physics 106 (7): 073519–26. doi:10.1063/1.3243312.