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Metal-induced dopant (boron and phosphorus) activation process in amorphous germanium for monolithic three-dimensional integration.
- Source :
-
Journal of Applied Physics . Oct2009, Vol. 106 Issue 7, p074510-074516. 6p. 2 Diagrams, 6 Graphs. - Publication Year :
- 2009
-
Abstract
- In this work, we investigate a low temperature boron (B) and phosphorus (P) activation in amorphous (α)-Ge using metal-induced crystallization technique. Eight candidates of metals (Pd, Cu, Ni, Au, Co, Al, Pt, and Ti) are used to crystallize the α-Ge at a low temperature. Resistivity measurement, transmission electron microscopy, and x-ray diffraction analyses reveal behaviors of the metal-induced dopant activation process using the metals reacting with α-Ge. It is revealed that Co achieves the highest B and P activation ratio in Ge below 360 °C with a slow diffusion rate. This method can be utilized to activate gate, source, and drain of transistors on upper layers in three-dimensional integrated circuits, where low temperature processing is critical. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 106
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 44642424
- Full Text :
- https://doi.org/10.1063/1.3238297