Investigation of self-assembled monolayer treatment on SiO2 gate insulator of poly(3-hexylthiophene) thin-film transistors

MLA

Horii, Yoshinori, et al. “Investigation of Self-Assembled Monolayer Treatment on SiO2 Gate Insulator of Poly(3-Hexylthiophene) Thin-Film Transistors.” Thin Solid Films, vol. 518, no. 2, Nov. 2009, pp. 642–46. EBSCOhost, https://doi.org/10.1016/j.tsf.2009.07.060.

APA

Horii, Y., Ikawa, M., Sakaguchi, K., Chikamatsu, M., Yoshida, Y., Azumi, R., Mogi, H., Kitagawa, M., Konishi, H., & Yase, K. (2009). Investigation of self-assembled monolayer treatment on SiO2 gate insulator of poly(3-hexylthiophene) thin-film transistors. Thin Solid Films, 518(2), 642–646. https://doi.org/10.1016/j.tsf.2009.07.060

Chicago

Horii, Yoshinori, Mitsuhiro Ikawa, Koichi Sakaguchi, Masayuki Chikamatsu, Yuji Yoshida, Reiko Azumi, Hiroshi Mogi, Masahiko Kitagawa, Hisatoshi Konishi, and Kiyoshi Yase. 2009. “Investigation of Self-Assembled Monolayer Treatment on SiO2 Gate Insulator of Poly(3-Hexylthiophene) Thin-Film Transistors.” Thin Solid Films 518 (2): 642–46. doi:10.1016/j.tsf.2009.07.060.