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Magnetoresistance Properties of Planar-Type Tunnel Junctions With Ferromagnetic Nanogap System Fabricated by Electromigration Method.
- Source :
-
IEEE Transactions on Magnetics . Oct2009, Vol. 45 Issue 10, p3480-3483. 4p. 4 Diagrams, 2 Graphs. - Publication Year :
- 2009
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Abstract
- We report electromigration techniques for the fabrication of planar-type tunnel junctions with ferromagnetic nanogap system. In these techniques, by monitoring the current passing through the devices, we are easily able to obtain the planar-type Ni-Vacuum-Ni tunnel junctions. In this paper, magnetoresistance (MR) properties of the planar-type Ni-based tunnel junctions formed by stepwise feedback-controlled electromigration (SFCE) and field-emission-induced electromigration (activation) are studied. We performed the SFCE method for Ni nanoconstrictions connecting asymmetrical butterfly-shape electrodes. Furthermore, the activation technique was applied to Ni nanogaps with separations of 15-45 nm. MR ratio of the devices formed by the SFCE exhibited approximately 4% at 16 K. On the other hand, the devices fabricated by the activation showed MR ratio of above 300% at 16 K. These results suggest that it is possible to fabricate planar-type ferromagnetic tunnel junctions with vacuum barriers by electromigration techniques. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189464
- Volume :
- 45
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Magnetics
- Publication Type :
- Academic Journal
- Accession number :
- 44703858
- Full Text :
- https://doi.org/10.1109/TMAG.2009.2024889