Controlled synthesis of pure and highly dispersive Cu(ii), Cu(i), and Cu(0)/MCM-41 with Cu[OCHMeCH2NMe2]2/MCM-41 as precursor.

Cu(ii)/MCM-41, Cu(i)/MCM-41 and Cu(0)/MCM-41 materials were prepared with Cu[OCHMeCH2NMe2]2/MCM-41 as precursor under controlled conditions. The states of copper on the resulting samples were characterized by temperature programmed reduction (TPR), UV-Vis diffuse reflectance spectroscopy (UV-Vis DRS), X-ray photoelectron spectroscopy (XPS), photoluminescence spectroscopy (PL), infrared spectroscopy (FTIR) of NO and CO adsorption, X-ray diffraction (XRD), and N2adsorption. It was shown that pure Cu(ii)/MCM-41 can be acquired by calcining Cu[OCHMeCH2NMe2]2/MCM-41 in pure oxygen at 573 K. Pure Cu(i)/MCM-41 can be obtained by reducing the as-prepared Cu(ii)/MCM-41 in a CO/He atmosphere at 473 K, while pure Cu(0)/MCM-41 can be obtained viareduction of the Cu(ii)/MCM-41 in a CO/He atmosphere at 673 K. The Cu(ii)–O and Cu(i)–O species were showed to be highly dispersed on the surface of MCM-41 as isolated sites. The study provides an alternative method for the preparation of pure copper metal or copper oxide supported materials. [ABSTRACT FROM AUTHOR]