Cite
Large memory window in the vanadium doped Bi4Ti3O12 thin films.
MLA
Kai-Huang Chen, et al. “Large Memory Window in the Vanadium Doped Bi4Ti3O12 Thin Films.” Applied Physics A: Materials Science & Processing, vol. 97, no. 4, Dec. 2009, pp. 919–23. EBSCOhost, https://doi.org/10.1007/s00339-009-5361-5.
APA
Kai-Huang Chen, Chia-Hsiung Chang, Chien-Min Cheng, & Cheng-Fu Yang. (2009). Large memory window in the vanadium doped Bi4Ti3O12 thin films. Applied Physics A: Materials Science & Processing, 97(4), 919–923. https://doi.org/10.1007/s00339-009-5361-5
Chicago
Kai-Huang Chen, Chia-Hsiung Chang, Chien-Min Cheng, and Cheng-Fu Yang. 2009. “Large Memory Window in the Vanadium Doped Bi4Ti3O12 Thin Films.” Applied Physics A: Materials Science & Processing 97 (4): 919–23. doi:10.1007/s00339-009-5361-5.