Magnetic impurity behavior in the type II broken-gap p-GaInAsSb/p-InAs:Mn heterostructures with 2D-semimetal channel at the interface

Abstract: Magnetic impurity behavior have been studied in type II p-GaInAsSb/p-InAs heterostructures grown by liquid-phase epitaxy on InAs substrate heavily doped with manganese (p=(5−7)×1018 cm−3). Ferromagnetic properties of these structures become apparent during observation of anomalous Hall effect and negative magnetoresistance (Δρ ⊥ /ρ) in low magnetic fields H=3–20kOe at T=77–200K. High value of negative magnetoresistance up to 30% and its quadratic dependence on a magnetic field were found. Effective magnetic moment M*=200μ B and Curie temperature T C=200K were evaluated. Contribution of Mn δ-layer placed on GaInAsSb epilayer was manifested in vertical quantum magnetotransport in high magnetic fields (B>8T) and low temperatures (1.5–4.2K). Presence of the narrow layer of Mn can control over spin-oriented tunneling of electrons from a semimetal channel across the type II broken-gap heterointerface. [Copyright &y& Elsevier]