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Electron transport properties of antimony doped SnO2 single crystalline thin films grown by plasma-assisted molecular beam epitaxy.
- Source :
-
Journal of Applied Physics . Nov2009, Vol. 106 Issue 9, p093704-093710. 6p. 1 Diagram, 6 Graphs. - Publication Year :
- 2009
-
Abstract
- By antimony doping tin oxide, SnO2:Sb (ATO), below 1.0% Sb concentration, controllable n-type doping was realized. Plasma-assisted molecular beam epitaxy has been used to grow high quality single crystalline epitaxial thin films of unintentionally doped (UID) and Sb-doped SnO2 on r-plane sapphire substrates. A UID thickness series showed an electron concentration of 7.9×1018 cm-3 for a 26 nm film, which decreased to 2.7×1017 cm-3 for a 1570 nm film, whereas the mobility increased from 15 to 103 cm2/V s, respectively. This series illustrated the importance of a buffer layer to separate unintentional heterointerface effects from the effect of low Sb doping. Unambiguous bulk electron doping was established by keeping the Sb concentration constant but changing the Sb-doped layer thickness. A separate doping series correlated Sb concentration and bulk electron doping. Films containing between 9.8×1017 and 2.8×1020 Sb atoms/cm3 generated an electron concentration of 1.1×1018–2.6×1020 cm-3. As the atomic Sb concentration increased, the mobility and resistivity decreased from 110 to 36 cm2/V s and 5.1×10-2 to 6.7×10-4 Ω cm, respectively. The Sb concentration was determined by secondary ion mass spectrometry. X-ray diffraction and atomic force microscopy measurements showed no detrimental effects arising from the highest levels of Sb incorporation. Temperature dependent Hall measurements established a lower limit for the Sb electron activation energy of 13.2 meV and found that films with greater than 4.9×1019 electrons/cm3 were degenerately doped. Within experimental uncertainties, 100% donor efficiency was determined for Sb-doped SnO2 in the range studied. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 106
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 45248932
- Full Text :
- https://doi.org/10.1063/1.3254241