Investigation on GaAs surface treated with dimethylaluminumhydride.

The reduction and removal of surface native oxides from as-degreased and HCl-treated GaAs substrates using dimethylaluminumhydride (DMAH) have been studied by x-ray photoelectron spectroscopy. It is revealed that higher oxide states are more easily removed from the GaAs surface after exposure to DMAH at 300 °C. Complete consumption of native oxides on HCl-treated GaAs surface has been realized with 10 s DMAH exposure. In addition, the metallization of the Al–O bonding with increase of DMAH exposure confirms the reduction of native oxides on GaAs. [ABSTRACT FROM AUTHOR]