In situ observation of the elastic deformation of a single epitaxial SiGe crystal by combining atomic force microscopy and micro x-ray diffraction.

An in situ combination of atomic force microscopy and micro x-ray diffraction was developed to study the elastic behavior of nanosized objects. This technique offers the means to locally access the Young elastic moduli and Poisson ratios of individual nanostructures. Here, we investigated the elastic behavior of a single self-assembled 450 nm high SiGe island. As pressure was applied on the island, the resonance frequency of the atomic force microscope tuning fork was tracked together with the x-ray diffraction stemming from this individual crystal. The change in the tip-island contact stiffness could be derived from the variation in the resonance frequency of the tuning fork, whereas the island mean lattice parameter was inferred from the center of mass of the island’s Bragg scattering. From this information, the reduced elastic modulus of the tip-island system could be directly determined, which is in very good agreement with literature values. The pressure needed to compress the island lattice to the Si value amounts to about 3 GPa and is in good accordance with finite-element method simulations of the displacement field in the pressurized object. [ABSTRACT FROM AUTHOR]