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Low-voltage organic n-channel thin-film transistors based on a core-cyanated perylene tetracarboxylic diimide derivative

Authors :
Zschieschang, Ute
Amsharov, Konstantin
Weitz, R. Thomas
Jansen, Martin
Klauk, Hagen
Source :
Synthetic Metals. Nov2009, Vol. 159 Issue 21/22, p2362-2364. 3p.
Publication Year :
2009

Abstract

Abstract: Using the small-molecule organic semiconductor bis(1H,1H-perfluorobutyl)-dicyano-perylene tetracarboxylic diimide, C3F7CH2-PTCDI-(CN)2, and a low-temperature-processed, high-capacitance gate dielectric based on a phosphonic acid self-assembled monolayer, we have manufactured n-channel thin-film transistors on glass substrates. The transistors operate with low voltages (2V) and have an electron mobility of 0.04cm2/Vs and an on/off ratio of 105. By combining C3F7CH2-PTCDI-(CN)2 n-channel transistors with pentacene p-channel transistors, we have also manufactured low-voltage, low-power organic complementary inverters with good static and dynamic performance. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
03796779
Volume :
159
Issue :
21/22
Database :
Academic Search Index
Journal :
Synthetic Metals
Publication Type :
Academic Journal
Accession number :
45555123
Full Text :
https://doi.org/10.1016/j.synthmet.2009.07.042