Cite
Electronic properties of Ge dangling bond centers at Si1-xGex/SiO2 interfaces.
MLA
Afanas’ev, V. V., et al. “Electronic Properties of Ge Dangling Bond Centers at Si1-XGex/SiO2 Interfaces.” Applied Physics Letters, vol. 95, no. 22, Nov. 2009, p. 222106. EBSCOhost, https://doi.org/10.1063/1.3266853.
APA
Afanas’ev, V. V., Houssa, M., Stesmans, A., Souriau, L., Loo, R., & Meuris, M. (2009). Electronic properties of Ge dangling bond centers at Si1-xGex/SiO2 interfaces. Applied Physics Letters, 95(22), 222106. https://doi.org/10.1063/1.3266853
Chicago
Afanas’ev, V. V., M. Houssa, A. Stesmans, L. Souriau, R. Loo, and M. Meuris. 2009. “Electronic Properties of Ge Dangling Bond Centers at Si1-XGex/SiO2 Interfaces.” Applied Physics Letters 95 (22): 222106. doi:10.1063/1.3266853.