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Dark current analysis of InAs/GaSb superlattices at low temperatures
- Source :
-
Infrared Physics & Technology . Nov2009, Vol. 52 Issue 6, p317-321. 5p. - Publication Year :
- 2009
-
Abstract
- Abstract: A limitation to the advancement of the strained-layer superlattice technology for infrared detection is unwanted high dark currents and low R 0 A values, especially at long-wavelengths. In this paper, we discuss dark current characteristics of LWIR InAs/GaSb type-II superlattice detectors. Comparing devices with different dominant mechanisms, a more thorough analysis at low temperatures is provided. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 13504495
- Volume :
- 52
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Infrared Physics & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 45643118
- Full Text :
- https://doi.org/10.1016/j.infrared.2009.05.022