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10-kV SiC MOSFET-Based Boost Converter.
- Source :
-
IEEE Transactions on Industry Applications . Nov/Dec2009, Vol. 45 Issue 6, p2056-2063. 8p. 2 Charts, 2 Graphs. - Publication Year :
- 2009
-
Abstract
- 10-kV silicon carbide (SiC) MOSFETs are currently being developed by a number of organizations in the U.S. with prospective applications in high-voltage and high-frequency power-electronic systems. The aim of this paper is to demonstrate the high-frequency and high-temperature capability of 10-kV SiC MOSFETs in the application of a dc/dc boost converter. In this study, 10-kV SiC MOSFET and junction barrier Schottky (JBS) diode were characterized and modeled in SPICE. Following this, a dc/dc boost converter based on a 10-kV 10-A MOSFET and a 10-kV 5-A JBS diode was designed and tested under continuous operation for frequencies up to 25 kHz. The boost converter had an output voltage of 4 kV, an output power of 4 kW, and operated with a junction temperature of 174 °C for the SiC MOSFET. The fast-switching speed, low losses, and high-temperature operation capability of 10-kV SiC MOSFETs demonstrated in the dc/dc boost converter make them attractive for high-frequency and high-voltage power-conversion applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00939994
- Volume :
- 45
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Industry Applications
- Publication Type :
- Academic Journal
- Accession number :
- 45647071
- Full Text :
- https://doi.org/10.1109/TIA.2009.2031915