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A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes.
- Source :
-
Journal of Applied Physics . Dec2009, Vol. 106 Issue 11, p114508-1-114508-4. 4p. 6 Graphs. - Publication Year :
- 2009
-
Abstract
- We present an electro-optical method for the extrapolation of the nonradiative and Auger recombination coefficients in InGaN/GaN Light-emitting diodes (LEDs). The method has the advantage of permitting the extrapolation of the recombination parameters of packaged devices, contrary to conventional techniques based on the analysis of quasibulk structures. For the analyzed devices, the average values of the nonradiative and Auger recombination coefficients have been determined to be equal to 2.3×107 s-1 and 1.0×10-30 cm6 s-1, respectively. These results are consistent with previous reports based on the analysis of quasibulk structures and on theoretical simulations. The method described in this paper constitutes an efficient tool for the analysis of the recombination dynamics in GaN-based LEDs. The results obtained within this work support the hypothesis on the importance of Auger recombination in determining the so-called efficiency droop in LED structures. [ABSTRACT FROM AUTHOR]
- Subjects :
- *LIGHT emitting diodes
*INDIUM
*GALLIUM nitride
*ELECTROOPTICS
*AUGER effect
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 106
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 46766346
- Full Text :
- https://doi.org/10.1063/1.3266014