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Deep centers in a free-standing GaN layer.
- Source :
-
Applied Physics Letters . 4/9/2001, Vol. 78 Issue 15, p2178. 3p. 4 Graphs. - Publication Year :
- 2001
-
Abstract
- Schottky barrier diodes, on both Ga and N faces of a ∼300-μm-thick free-standing GaN layer, grown by hydride vapor phase epitaxy (HVPE) on Al[sub 2]O[sub 3] followed by laser separation, were studied by capacitance-voltage and deep level transient spectroscopy (DLTS) measurements. From a 1/C[sup 2] vs V analysis, the barrier heights of Ni/Au Schottky contacts were determined to be different for the two polar faces: 1.27 eV for the Ga face, and 0.75 eV for the N face. In addition to the four common DLTS traps observed previously in other epitaxial GaN including HVPE-grown GaN a new trap B[sup ′] with activation energy E[sub T]=0.53 eV was found in the Ga-face sample. Also, trap E[sub 1] (E[sub T]=0.18 eV), believed to be related to the N vacancy, was found in the N-face sample, and trap C (E[sub T]=0.35 eV) was in the Ga-face sample. Trap C may have arisen from reactive-ion-etching damage. [ABSTRACT FROM AUTHOR]
- Subjects :
- *GALLIUM nitride
*SCHOTTKY barrier diodes
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 78
- Issue :
- 15
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4710520
- Full Text :
- https://doi.org/10.1063/1.1361273