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InGaAsNSb/GaAs quantum wells for 1.55 μm lasers grown by molecular-beam epitaxy.
- Source :
-
Applied Physics Letters . 6/25/2001, Vol. 78 Issue 26, p4068. 3p. 1 Diagram, 4 Graphs. - Publication Year :
- 2001
-
Abstract
- InGaAsNSb/GaAs quantum wells (QWs) were grown by solid-source molecular-beam epitaxy using a N[sub 2] radio frequency plasma source. The effect of adding Sb during growth of InGaAsN/GaAs QWs was studied. X-ray diffraction, reflection high-energy electron diffraction and transmission electron microscopy studies indicate that Sb suppresses the three-dimensional growth and improves the interface of the QWs. X-ray diffraction and secondary ion mass spectroscopy analysis show that Sb gets incorporated into the quantum well, which becomes a quinternary compound that was previously unexplored. The introduction of Sb during growth of InGaAsN/GaAs QWs significantly enhances the optical properties of the QWs. 1.53 μm room-temperature photoluminescence was obtained from InGaAsNSb/GaAs QWs, which demonstrates the potential of fabricating 1.55 μm InGaAsNSb/GaAs QW lasers for long-haul applications. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *QUANTUM wells
*MOLECULAR beam epitaxy
*RADIO frequency
*LASERS
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 78
- Issue :
- 26
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4711099
- Full Text :
- https://doi.org/10.1063/1.1379787