Back to Search
Start Over
Injection- and space charge limited-currents in doped conducting organic materials.
- Source :
-
Journal of Applied Physics . 4/1/2001, Vol. 89 Issue 7. 1 Diagram, 6 Graphs. - Publication Year :
- 2001
-
Abstract
- Most conducting organic materials have a background p-type doping varying in the range 10[sup 15]-10[sup 17] cm[sup -3]. We report results of a theoretical and experimental study of carrier transport in p-doped organic Schottky diodes. The theory given in this article shows that in a doped organic material with ohmic contacts the current is ohmic at low voltages. If the ohmic contact at the cathode is replaced by an Al Schottky contact the current varies exponentially with the applied voltage V. The current changes to space charge limited current (SCLC) at high voltages. The voltage at which the change takes place depends on the doping concentrations. In the SCLC regime the current varies according to the well-known V[sup 2] law if there are no traps and the mobility is independent of the electric field. If either trapping or effect of field on mobility is important, the current varies as V[sup m], where m>2. We have investigated experimentally the I-V characteristics of Schottky diodes fabricated using the PPV-based oligomer 2,5-di-n-octyloxy-1,4-bis (4′, 4″-bis-styryl) styrylbenzene (Ooct-OPV5) blended with polystyrene (PS) and the PPV-based polymer poly(2-methoxy-5-(3,7-dimethyloctyloxy)-p-phenylene vinylene) (OC[sub 1]C[sub 10]). As predicted by the theory, Al/Ooct-OPV5:PS/ITO (indium tin oxide) and Al/OC[sub 1]C[sub 10]/ITO Schottky diodes do show that the current varies exponentially with V at low voltages and as SCLC according to the V[sup m] law (with m=3) at high voltages. The V[sup 3] variation of the current in the SCLC regime can be due to trapping or field dependent mobility. It is not possible to distinguish unambiguously between the two mechanisms using the experimental results. The voltage at which transition from the Shockley current to SCLC takes place can be used to determine the background doping concentration. The p-type background doping concentration in the Ooct-OPV5 is found to be ∼10[sup 17] cm[sup -3]. From the tem... [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 89
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 4711527
- Full Text :
- https://doi.org/10.1063/1.1352677