Determination of the surface potential in thin-film transistors from C-V measurements.

In this article we present a method for the determination of the gate voltage versus surface potential (V[sub GS]-ψ[sub S]) relationship in thin-film transistors (TFTs), from low frequency capacitance-voltage (C-V) characteristics. This information is very important for device design, process characterization, and modeling of TFTs and provides the basis for extracting the gap density of states. The accuracy of the method is demonstrated by applying it to the analysis of C-V data generated by two-dimensional simulations. Its application to laser recrystallized polysilicon TFTs is presented. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]