Cite
Electrical and microstructural properties of highly boron-implantation doped 6H-SiC.
MLA
Panknin, D., et al. “Electrical and Microstructural Properties of Highly Boron-Implantation Doped 6H-SiC.” Journal of Applied Physics, vol. 89, no. 6, Mar. 2001, p. 3162. EBSCOhost, https://doi.org/10.1063/1.1333743.
APA
Panknin, D., Wirth, H., Mu¨cklich, A., & Skorupa, W. (2001). Electrical and microstructural properties of highly boron-implantation doped 6H-SiC. Journal of Applied Physics, 89(6), 3162. https://doi.org/10.1063/1.1333743
Chicago
Panknin, D., H. Wirth, A. Mu¨cklich, and W. Skorupa. 2001. “Electrical and Microstructural Properties of Highly Boron-Implantation Doped 6H-SiC.” Journal of Applied Physics 89 (6): 3162. doi:10.1063/1.1333743.