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Electrical and materials properties of ZrO[sub 2] gate dielectrics grown by atomic layer chemical vapor deposition.
- Source :
-
Applied Physics Letters . 4/16/2001, Vol. 78 Issue 16, p2357. 3p. 1 Diagram, 4 Graphs. - Publication Year :
- 2001
-
Abstract
- Structural and electrical properties of gate stack structures containing ZrO[sub 2] dielectrics were investigated. The ZrO[sub 2] films were deposited by atomic layer chemical vapor deposition (ALCVD) after different substrate preparations. The structure, composition, and interfacial characteristics of these gate stacks were examined using cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy. The ZrO[sub 2] films were polycrystalline with either a cubic or tetragonal crystal structure. An amorphous interfacial layer with a moderate dielectric constant formed between the ZrO[sub 2] layer and the substrate during ALCVD growth on chemical oxide-terminated silicon. Gate stacks with a measured equivalent oxide thickness (EOT) of 1.3 nm showed leakage values of 10[sup -5] A/cm[sup 2] at a bias of -1 V from flatband, which is significantly less than that seen with SiO[sub 2] dielectrics of similar EOT. A hysteresis of 8-10 mV was seen for ±2 V sweeps while a midgap interface state density (D[sub it]) of ∼3x10[sup 11] states/cm eV was determined from comparisons of measured and ideal capacitance curves. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 78
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4715161
- Full Text :
- https://doi.org/10.1063/1.1362331