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Stress-enhancement in free-standing Si pillars through nonequilibrium dehydrogenation in SiN:H stress-liners by ultraviolet light irradiation.
- Source :
-
Applied Physics Letters . 12/28/2009, Vol. 95 Issue 26, p262103. 3p. 1 Diagram, 3 Graphs. - Publication Year :
- 2009
-
Abstract
- Tensile-strained Si pillars are desired to achieve three-dimensional (3D) transistors with high speed. Effects of ultraviolet (UV) light irradiation on tensile strains in Si pillars covered with SiN:H stress-liners are investigated as a function of the wavelength (172–436 nm). Tensile-stress enhancement is found at specific wavelengths (200–330 nm) under low-temperature heating (400 °C), where dehydrogenation in SiN:H is clearly detected by infrared absorption measurements. On the other hand, equilibrium dehydrogenation by high-temperature heating (>700 °C) without UV-irradiation does not cause tensile-stress enhancement. This nonequilibrium dehydrogenation at low temperatures opens up possibility of 3D transistors with high carrier mobility. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 95
- Issue :
- 26
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 47244487
- Full Text :
- https://doi.org/10.1063/1.3278596