Improved electrical properties of Pr-doped films

Abstract: Sr1−x Pr x TiO3 films were prepared by metal organic deposition method on (111) Pt/Ti/SiO2/Si substrates. Pr-doping greatly improves the dc leakage behavior of the films. The samples with show excellent electric field frequency and temperature stability of dielectric properties, while the samples indicate an obvious dielectric relaxation behavior and better polarization versus applied electric field (–) hysteresis loops. These peculiar electrical properties can be explained mainly by the Pr-doping-induced changes in the free charge carriers, the lattice distortion, the charge transfer process and polar nanoregions. In addition, the variable valence of Pr ions may also have significant impacts. [Copyright &y& Elsevier]