Cite
Zero-Bias Mixer Based on A1GaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications.
MLA
King-Yuen Wong, et al. “Zero-Bias Mixer Based on A1GaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications.” IEEE Transactions on Electron Devices, vol. 56, no. 12, Dec. 2009, pp. 2888–94. EBSCOhost, https://doi.org/10.1109/TED.2009.2032279.
APA
King-Yuen Wong, Wanjun Chen, Qi Zhou, & Chen, K. J. (2009). Zero-Bias Mixer Based on A1GaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications. IEEE Transactions on Electron Devices, 56(12), 2888–2894. https://doi.org/10.1109/TED.2009.2032279
Chicago
King-Yuen Wong, Wanjun Chen, Qi Zhou, and Kevin J. Chen. 2009. “Zero-Bias Mixer Based on A1GaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications.” IEEE Transactions on Electron Devices 56 (12): 2888–94. doi:10.1109/TED.2009.2032279.