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A Physics-Based Compact Model of III-V FETs for Digital Logic Applications: Current-Voltage and Capacitance-Voltage Characteristics.
- Source :
-
IEEE Transactions on Electron Devices . Dec2009, Vol. 56 Issue 12, p2917-2924. 8p. 2 Diagrams, 1 Chart, 8 Graphs. - Publication Year :
- 2009
-
Abstract
- A physics-based analytical compact model of InGaAs field-effect transistors (FETs) for digital logic applications is developed. This model neither heavily depends on parameter extraction nor requires any time-consuming computation while capturing the essential physics, enabling digital circuit design and circuit-level performance estimation for III-V FETs. The model captures short channel effects, trapezoidal-shape quantum-well energies, bias-dependent ballistic ratios, and capacitances including 2-D potential profile information. Each is verified via numerical calculations and 2-D electrostatic simulation, followed by a comparison o the model I-V characteristics with experiment data. Finally, the transient response of FO4 inverters demonstrates the use of the compact model for future technology circuit simulations. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 56
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 47399970
- Full Text :
- https://doi.org/10.1109/TED.2009.2033411