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Capacitive Micro Pressure Sensor Integrated with a Ring Oscillator Circuit on Chip.

Authors :
Ching-Liang Dai
Po-Wei Lu
Chienliu Chang
Cheng-Yang Liu
Source :
Sensors (14248220). 2009, Vol. 9 Issue 12, p10158-10170. 13p. 1 Color Photograph, 1 Black and White Photograph, 3 Diagrams, 1 Chart, 7 Graphs.
Publication Year :
2009

Abstract

The study investigates a capacitive micro pressure sensor integrated with a ring oscillator circuit on a chip. The integrated capacitive pressure sensor is fabricated using the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The ring oscillator is employed to convert the capacitance of the pressure sensor into the frequency output. The pressure sensor consists of 16 sensing cells in parallel. Each sensing cell contains a top electrode and a lower electrode, and the top electrode is a sandwich membrane. The pressure sensor needs a post-CMOS process to release the membranes after completion of the CMOS process. The post-process uses etchants to etch the sacrificial layers, and to release the membranes. The advantages of the post-process include easy execution and low cost. Experimental results reveal that the pressure sensor has a high sensitivity of 7 Hz/Pa in the pressure range of 0-300 kPa. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
14248220
Volume :
9
Issue :
12
Database :
Academic Search Index
Journal :
Sensors (14248220)
Publication Type :
Academic Journal
Accession number :
47434459
Full Text :
https://doi.org/10.3390/s91210158