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Anisotropic defect reduction in non-polar a-plane GaN grown by hydride vapor phase epitaxy on maskless patterned templates
- Source :
-
Applied Surface Science . Jan2010, Vol. 256 Issue 7, p2236-2240. 5p. - Publication Year :
- 2010
-
Abstract
- Abstract: Several non-polar a-plane GaN films had been grown by hydride vapor phase epitaxy (HVPE) on different designed metal organic chemical deposition (MOCVD) GaN templates, which exhibited various ridge-like sidewall facets surface morphologies. The templates induced a lateral growth at the early stage of the HVPE growth, and resulted in a kind of maskless epitaxy lateral overgrown (ELO) process. It is found that the dislocation reduced differently along [1000] and [] directions in these HVPE a-plane GaN layers. In [0001] direction, the dislocation reduction resulted from the optimal surface roughness value of the template. In [] direction, the inclined facet might be a main factor for the dislocation reduction in HVPE-GaN films. The maskless ELO process had a significant influence on decreasing the dislocation density. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 256
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 47608488
- Full Text :
- https://doi.org/10.1016/j.apsusc.2009.09.082