Back to Search
Start Over
Modeling CMOS Tunneling Currents Through Ultrathin Gate Oxide Due to Conduction- and Valence-Band Electron and Hole Tunneling.
- Source :
-
IEEE Transactions on Electron Devices . Jul2001, Vol. 48 Issue 7, p1366. 8p. 2 Diagrams, 1 Chart, 12 Graphs. - Publication Year :
- 2001
-
Abstract
- Proposes a semi-empirical model to quantify the tunneling currents through ultrathin gate oxides. Background physics; Formulation for the proposed model; Calibration of effective masses and other model parameters; Validation of the model; Extraction of oxide thickness using current-voltage characteristics.
- Subjects :
- *METAL oxide semiconductors
*QUANTUM tunneling
*MATHEMATICAL models
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 48
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 4763162
- Full Text :
- https://doi.org/10.1109/16.930653