Modeling CMOS Tunneling Currents Through Ultrathin Gate Oxide Due to Conduction- and Valence-Band Electron and Hole Tunneling.

Proposes a semi-empirical model to quantify the tunneling currents through ultrathin gate oxides. Background physics; Formulation for the proposed model; Calibration of effective masses and other model parameters; Validation of the model; Extraction of oxide thickness using current-voltage characteristics.