Three-Dimensional CMOS SOI Integrated Circuit Using High-Temperature Metal-Induced Lateral Crystallization.

Proposes a three-dimensional (3-D) complementary metal oxide semiconductor (CMOS) integrated circuit based on the conventional CMOS silicon-on-insulator technology. Discussion on the 3-D thin film transistor CMOS technology and design issues; Description on the fabrication process; Device characteristics; Inverter characteristics and circuit performance.