Cite
Valence band variation in Si (110) nanowire induced by a covered insulator.
MLA
Hong, Xu, et al. “Valence Band Variation in Si (110) Nanowire Induced by a Covered Insulator.” Chinese Physics B, vol. 19, no. 1, Jan. 2010, pp. 014601-5. EBSCOhost, https://doi.org/10.1088/1674-1056/19/1/014601.
APA
Hong, X., Xiao, L., Yu, H., Chun, F., Gang, D., Ai, S., Ru, H., and, Q., & Jin, K. (2010). Valence band variation in Si (110) nanowire induced by a covered insulator. Chinese Physics B, 19(1), 014601-5. https://doi.org/10.1088/1674-1056/19/1/014601
Chicago
Hong, Xu, Liu Xiao, He Yu, Fan Chun, Du Gang, Sun Ai, Han Ru, Qi and, and Kang Jin. 2010. “Valence Band Variation in Si (110) Nanowire Induced by a Covered Insulator.” Chinese Physics B 19 (1): 014601-5. doi:10.1088/1674-1056/19/1/014601.