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On the Multiple Negative-Differential-Resistance (MNDR) InGaP/GaAs Resonant Tunneling Bipolar Transistors.
- Source :
-
IEEE Transactions on Electron Devices . Jun2001, Vol. 48 Issue 6, p1054. 6p. 7 Black and White Photographs, 2 Diagrams, 6 Graphs. - Publication Year :
- 2001
-
Abstract
- Focuses on a study which fabricated and examined two indium gallium phosphide/gallium arsenide resonant tunneling bipolar transistors with different superlattice structures in the emitters. Considerations in transistor characteristics; Analysis and comparison of multiple negative differential resistance characteristics; Conclusion.
- Subjects :
- *BIPOLAR transistors
*INDIUM
*GALLIUM arsenide
*SUPERLATTICES
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 48
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 4780199
- Full Text :
- https://doi.org/10.1109/16.925225