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Stability and phase transition studies of Ga–pWSe2 Schottky diode by current–voltage–temperature method
- Source :
-
Thin Solid Films . Mar2010, Vol. 518 Issue 10, p2695-2700. 6p. - Publication Year :
- 2010
-
Abstract
- Abstract: Ga–pWSe2 Schottky diodes have been fabricated by making contact of liquid gallium on pWSe2 surfaces. The stability and phase transition of the diodes were investigated in terms of barrier height, ideality factor and series resistance using thermionic emission model by current–voltage method. The anomalous behaviour of these parameters during the initial hours of fabrication is interpreted in terms of the phase related transition of gallium from liquid to solid. Beyond this time period, diodes show stable nature in its parameters. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 518
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 48118706
- Full Text :
- https://doi.org/10.1016/j.tsf.2009.09.022